PureSiC® CVD Silicon Carbide

Composition

SiC

View All Silicon Carbide

puresic® cvd silicon carbide overview

Chemical vapor deposition (CVD) silicon carbide resists corrosion in extreme environments while maintaining the high strength and excellent wear properties of silicon carbide. This capability, combined with the exceptional purity of 99.9995%, is helping make the ultra-clean manufacturing used in semiconductor production run faster and more efficiently.

Example Applications

Wafer chucks
Etch components

CoorsTek Formulations

Contact a CoorsTek expert to choose a CVD Silicon Carbide solution for your application.

Property	Units	Value
Flexural Strength, MOR (20 °C)	MPa	460 - 517
Fracture Toughness, K_Ic	MPa m^1/2	3.5 - 4.0
Thermal Conductivity (20 °C)	W/m K	170
Coefficient of Thermal Expansion	1 x 10^-6/°C	4.6
Maximum Use Temperature	°C	1600
Dielectric Strength (6.35mm)	ac-kV/mm	-
Dielectric Loss (tan δ)	1MHz, 25 °C	-
Volume Resistivity (25°C)	Ω-cm	0.1 to 10⁵

The information provided on this chart is for general material property reference only. The customer should recognize that exact properties of materials may vary according to product configuration but close control of values of most properties can be maintained, if specified. Nothing herein is provided, or is to be construed, as absolute engineering data or constituting a warranty or representation. Contact CoorsTek for cost-effective design, development and manufacturing assistance. CoorsTek has 300+ variations including various forming and firing processes, not all variants are represented in the present website.

PureSiC® CVD Silicon Carbide

puresic® cvd silicon carbide overview

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