UltraClean™ Recrystallized Silicon Carbide
Composition
Si:SiC
ultraclean™ recrystallized silicon carbide overview
Recrystallized silicon carbide, like reaction bonded silicon carbide, can be infiltrated with silicon metal. However, the infiltration process occurs after the primary sintering. This grain structure not only provides excellent material properties, but also enables extremely precise manufacturing along with high purity used in industries like semiconductor production.
Example Applications
- Wafer handling components
- Semiconductor paddles
CoorsTek Formulations
Contact a CoorsTek expert to discuss a custom solution manufactured from Recrystallized Silicon Carbide to fit your application.
| Property | Units | Value |
|---|---|---|
Flexural Strength, MOR (20 °C) |
MPa |
210 - 480 |
Fracture Toughness, KIc |
MPa m1/2 |
4.0 - 4.5 |
Thermal Conductivity (20 °C) |
W/m K |
105 - 225 |
Coefficient of Thermal Expansion |
1 x 10-6/°C |
4.2 - 4.8 |
Maximum Use Temperature |
°C |
1350 - 1600 |
Dielectric Strength (6.35mm) |
ac-kV/mm |
- |
Dielectric Loss (tan δ) |
1MHz, 25 °C |
- |
Volume Resistivity (25°C) |
Ω-cm |
< 0.1 to 1.0 |
The information provided on this chart is for general material property reference only. The customer should recognize that exact properties of materials may vary according to product configuration but close control of values of most properties can be maintained, if specified. Nothing herein is provided, or is to be construed, as absolute engineering data or constituting a warranty or representation. Contact CoorsTek for cost-effective design, development and manufacturing assistance. CoorsTek has 300+ variations including various forming and firing processes, not all variants are represented in the present website.
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