GaN on Silicon Epiwafers
Next-generation power electronics substrate
As silicon-based power devices reach their physical limits, Gallium Nitride (GaN) is the material of choice for the power electronics industry. GaN is replacing Silicon (Si) for more energy-efficient, smaller, cooler, and faster power devices in demanding applications including data servers, RF and microwave, solar cell inverters, and electric and hybrid vehicles.
GaN epi layers on Silicon wafers
CoorsTek deposits thin epitaxial layers of gallium nitride on top of silicon wafers, creating GaN-on-Si epiwafers which deliver the benefits of GaN at a a much better value than conventional GaN wafers. These epiwafers are available in both 150 mm and 200 mm diameters.
High-power performance & value
The powerful combination of performance and value make GaN-on-Si the epiwafer of choice for lateral-type high electron mobility transistor (HEMT) devices.
- Ø 150 mm and 200 mm epiwafers
- Higher breakdown voltage
- Improved manufacturing yields
- Best choice for HEMT devices
- Custom epiwafer structures available
Higher breakdown voltage
CoorsTek buffer layer technology reduces the leakage current, enabling higher breakdown voltages using the same top layers and substrates.
Improved manufacturing yields
CoorsTek epiwafer technology delivers lower defect density, improving device manufacturing yields.
State of the art epiwafer technology
CoorsTek is the world’s largest manufacturer of engineered ceramics, with decades of experience producing ultra-pure materials and custom components used in electronics and semiconductor processing. Leveraging our deep expertise in GaN, compound semiconductors, and analysis, CoorsTek is ready to support your standard and custom epiwafer requirements.
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