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Direct Sintered Aluminum Nitride



direct sintered aluminum nitride overview

Direct sintered aluminum nitride is used in applications requiring high thermal conductivity and electrical resistivity with extreme temperature fluctuation, like high-intensity discharge lighting.

Example Applications

  • Substrates for LEDs and power electronics
  • Semiconductor manufacturing components


CoorsTek Formulations

Contact a CoorsTek expert to discuss custom solutions manufactured from Direct Sintered Aluminum Nitride.

Property Units Value

Flexural Strength, MOR (20 °C)


260 - 375

Fracture Toughness, KIc

MPa m1/2

3.0 - 3.6

Thermal Conductivity (20 °C)

W/m K

80 - 205

Coefficient of Thermal Expansion

1 x 10-6/°C

5.2 - 5.6

Maximum Use Temperature



Dielectric Strength (6.35mm)


15 - 25

Dielectric Loss (tan δ)

1MHz, 25 °C

0.0002 - 0.0077

Volume Resistivity (25°C)


1011 to 1014

The information provided on this chart is for general material property reference only.  The customer should recognize that exact properties of materials may vary according to product configuration but close control of values of most properties can be maintained, if specified. Nothing herein is provided, or is to be construed, as absolute engineering data or constituting a warranty or representation. Contact CoorsTek for cost-effective design, development and manufacturing assistance. CoorsTek has 300+ variations including various forming and firing processes, not all variants are represented in the present website.

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