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PureSiC® CVD Silicon Carbide

Composition

SiC

puresic® cvd silicon carbide overview

Chemical vapor deposition (CVD) silicon carbide resists corrosion in extreme environments while maintaining the high strength and excellent wear properties of silicon carbide. This capability, combined with the exceptional purity of 99.9995%, is helping make the ultra-clean manufacturing used in semiconductor production run faster and more efficiently.

Example Applications

  • Wafer chucks
  • Etch components

 

CoorsTek Formulations

Contact a CoorsTek expert to choose a CVD Silicon Carbide solution for your application.

Property Units Value

Flexural Strength, MOR (20 °C)

MPa

460 - 517

Fracture Toughness, KIc

MPa m1/2

3.5 - 4.0

Thermal Conductivity (20 °C)

W/m K

170

Coefficient of Thermal Expansion

1 x 10-6/°C

4.6

Maximum Use Temperature

°C

1600

Dielectric Strength (6.35mm)

ac-kV/mm

-

Dielectric Loss (tan δ)

1MHz, 25 °C

-

Volume Resistivity (25°C)

Ω-cm

0.1 to 105

The information provided on this chart is for general material property reference only.  The customer should recognize that exact properties of materials may vary according to product configuration but close control of values of most properties can be maintained, if specified. Nothing herein is provided, or is to be construed, as absolute engineering data or constituting a warranty or representation. Contact CoorsTek for cost-effective design, development and manufacturing assistance. CoorsTek has 300+ variations including various forming and firing processes, not all variants are represented in the present website.

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